Hong Byung-seop | Memory R&d Division Hynix Semiconductor Inc.
スポンサーリンク
概要
関連著者
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
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Yang Hong-seon
Memory R&d Division Hynix Semiconductor Inc.
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Oh Jae-geun
Memory R&d Division Hynix Semiconductor Inc.
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Lee Jung-ho
Memory R&d Division Hynix Semiconductor Inc.
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Hong Byung-seop
Memory R&d Division Hynix Semiconductor Inc.
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Sohn Hyun-chul
Memory R&d Division Hynix Semiconductor Inc.
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Cho Heung-jae
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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LEE Jung-Ho
Memory R&D Division, Hynix Semiconductor Inc.
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Jang S‐a
Memory R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
Memory R&d Division Hyundai Electronics Ind. Co. Ltd.
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Jang Se-aug
Memory R&d Division Hynix Semiconductor Inc.
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Kim Yang
Department Of Material Science And Engineering Kaist
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KIM Yong
Memory R&D Division, Hynix Semiconductor Inc.
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SOHN Hyun-Chul
Memory R&D Division, Hynix Semiconductor Inc.
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HONG Byung-Seop
Memory R&D Division, Hynix Semiconductor Inc.
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Sohn H‐c
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Lee J‐h
Memory R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
R&d Division Hynix Semiconductor Inc.
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Kim Yong
Memory R&d Division Hynix Semiconductor Inc.
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Cho Heung-Jae
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Hong Byung-Seop
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
著作論文
- Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
- Impact of In Situ NH3 Preannealing on Sub-100 nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation