Yang Hong-seon | Memory R&d Division Hynix Semiconductor Inc.

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著作論文

Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM
Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes
Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack
Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors
Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process
The incorporation effect of thin Al_2O_3 layers on ZrO_2-Al_2O_3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devices
Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices
Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices
Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process
Impact of In Situ NH3 Preannealing on Sub-100 nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation

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