Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices
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概要
- 論文の詳細を見る
Tungsten dual polygate (W-DPG) stacks with diffusion barriers formed by the Ti(N) process were investigated in terms of gate contact resistance ($R_{\text{c}}$) and the polydepletion effect. The Ti layer in the Ti/WN diffusion barrier is found to be converted into a TiSix/TiN bilayer during the postdeposition annealing process. The TiSix reaction between Ti and p+ polycrystalline silicon (poly-Si) effectively prevents the formation of a parasitic dielectric layer, which could lead to low-gate $R_{\text{c}}$. The TiN reaction between Ti and WN minimizes the occurrence of the TiSix reaction, which effectively reduces p+ polydepletion caused by the out-diffusion of boron during the postdeposition annealing process. Therefore, poly-Si/Ti/WN/W could be a promising tungsten dual polygate stack, which satisfies high-speed requirements in dynamic random-access memory (DRAM) devices.
- 2007-04-30
著者
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
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Yang Hong-seon
Memory R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
Memory R&d Division Hynix Semiconductor Inc.
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Kim Tae-yoon
Memory R&d Division Hynix Semiconductor Inc.
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Pyi Seung-ho
Memory R&d Div. Hyundai Electronics Ind. Co. Ltd.
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Kim Yong
Memory R&d Division Hynix Semiconductor Inc.
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Sung Min
Memory R&d Division Hynix Semiconductor Inc.
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Lee Seung
Memory R&d Division Hynix Semiconductor Inc.
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Kim Jin
Memory Division Samsung Electronics Corporation
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Lee Ju-Hee
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Joo Moon
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Pyi Seung-Ho
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Joo Moon
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Sung Min
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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