Research of Bulk Erase Operation in Vertical Three-Dimensional Cell Array Architecture (Special Issue : Solid State Devices and Materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Song Yun-Heub

  Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea

• Yang Hyung-Jun

  Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea

• Lee Gae-Hun

  Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea

• Kim Kyeong-Rok

  Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea

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• Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory
• Bidirectional Two-Terminal Switching Device for Non-Volatile Random Access Memory
• Research of Bulk Erase Operation in Vertical Three-Dimensional Cell Array Architecture
• Research of Bulk Erase Operation in Vertical Three-Dimensional Cell Array Architecture (Special Issue : Solid State Devices and Materials)

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