Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory

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概要

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• We present a bidirectional two-terminal switching device using a Schottky barrier for spin-transfer-torque magnetic random access memory (STT-MRAM), which is composed of a Schottky barrier contact with a metal/semiconductor/metal (M/S/M) structure. The proposed M/S/M switching device provides a bidirectional current flow sufficient to write STT-MRAM using a punch through with an extended depletion region at a junction under a reverse bias of M/S or S/M. In addition, a high on--off ratio of 10^{5} is confirmed under the read condition, which is acceptable for the operation of STT-MRAM. From this work, it is expected that an M/S/M structure with bilateral Schottky junctions will be a promising switch device for STT MRAM beyond 20 nm.

• 2012-10-25

著者

• Song Yun-Heub

  Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea

• Kil Gyu-Hyun

  Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea

• Park Yong-Sik

  Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea

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• Bidirectional Two-Terminal Switching Device for Non-Volatile Random Access Memory
• Research of Bulk Erase Operation in Vertical Three-Dimensional Cell Array Architecture
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