New Silicon-on-Insulator (SOI) Flash Memory with Side Channel and Side Floating Gate
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概要
- 論文の詳細を見る
A new silicon-on-insulator (SOI) flash memory with a side channel and side floating gate has been proposed to reduce the power consumption and to increase the packing density in this paper. We utilized atomic layer doping (ALD) method for forming the ultra shallow junction on the side surface of the device. The threshold voltage shift of 0.25 V was obtained for small erasing/writing voltages in a 0.1 μm SOI flash memory. This device can be operated with a small number of electrons.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
-
Tanabe Tadao
Venture Business Laboratory Tohoku University
-
KOH Kwang
Venture Business Laboratory, Tohoku University
-
Kotaki Noriyuki
Department Of Machine Intelligence And Systems Engineering Tohoku University
-
Koyanagi Mitsumasa
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
-
Kurino Hiroyuki
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Shim Jeoung
Department Of Machine Intelligence And Systems Engineering Tohoku University
-
Choi Hoon
Department Of Bioengineering And Robotics Tohoku University
-
Park Ki
Department Of Agricultural Chemistry Division Of Applied Life Science Gyeongsang National University
-
Koh Kwang
Venture Business Laboratory, Tohoku University, 01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Koyanagi Mitsumasa
Department of Machine Intelligence and Systems Engineering, Tohoku University, 01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Kotaki Noriyuki
Department of Machine Intelligence and Systems Engineering, Tohoku University, 01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Kurino Hiroyuki
Department of Machine Intelligence and Systems Engineering, Tohoku University, 01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Tanabe Tadao
Venture Business Laboratory, Tohoku University, 01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Shim Jeoung
Department of Machine Intelligence and Systems Engineering, Tohoku University, 01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Park Ki
Department of Machine Intelligence and Systems Engineering, Tohoku University, 01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Choi Hoon
Department of Machine Intelligence and Systems Engineering, Tohoku University, 01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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