Characteristics of Metal Gate GOI-MOSFET with High-k Gate Dielectric Fabricated by Ge Condensation Method

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• KOYANAGI Mitsumasa

  Department of Machine Intelligence and Systems Engineering, Tohoku University

• CHOI Hoon

  Department of Bioengineering and Robotics, Tohoku University

• FUKUSHIMA Takafumi

  Department of Bioengineering and Robotics, Tohoku University

• PARK Mungi

  Department of Bioengineering and Robotics, Tohoku University

• BEA Jicheol

  Department of Bioengineering and Robotics, Tohoku University

• Koyanagi Mitsumasa

  Cir Tohoku University

• Fukushima Takafumi

  Dept. Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University

• Fukushima Takafumi

  Department Of Advanced Materials Chemistry Graduate School Of Engineering Yokohama National Universi

• Koyanagi Mitsumasa

  Dept. Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University

• Koyanagi Mitsumasa

  Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University

• Choi Hoon

  Department Of Bioengineering And Robotics Tohoku University

• Kamiyanagi Masashi

  Center For Interdisciplinary Research Tohoku University

• Park Mungi

  Department Of Bioengineering And Robotics Tohoku University

• Bea Jicheol

  Department Of Bioengineering And Robotics Tohoku University

• Koyanagi Mitsumasa

  Department Of Bioengineering And Robotics Tohoku University

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