Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor (Special Issue: Solid State Devices & Materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Fukushima Takafumi
Dept. Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Sakaguchi Takahiro
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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