Low power spin-transfer magnetoresistive random access memory writing scheme with selective word line bootstrap (Special issue: Solid state devices and materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Fukushima Takafumi
Dept. Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Sakaguchi Takahiro
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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