Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots
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概要
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Tungsten nanodots (W-NDs) with an ultrahigh density of $1\times 10^{13}$/cm2 and a small size of around of 1.5–2 nm were successfully formed by self-assembled nanodot deposition (SAND). A metal–oxide–semiconductor (MOS) memory device was also fabricated with a W-ND layer placed between tunneling SiO2 and block SiO2. Using this device, the effects of annealing on the capacitance characteristics were investigated in detail. After 900 °C post deposition annealing (PDA), an extremely large memory window of about 9.2 V was obtained, indicating that the device is a strong contender for future nonvolatile memory (NVM) applications. The program/erase speed and retention characteristics were also evaluated. The oxidation of tungsten by oxygen from the cosputtered silicon oxide was confirmed by X-ray photoelectron spectroscopy (XPS) measurement. It is considered to degrade the retention characteristics of MOS memory devices.
- 2008-04-25
著者
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Fukushima Takafumi
Department Of Advanced Materials Chemistry Graduate School Of Engineering Yokohama National Universi
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Tanaka Tetsu
Department Of Quantum Materials Science University Of Tokushima
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Koyanagi Mitsumasa
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Pei Yan-Li
International Advanced Research and Education Organization, Tohoku University, 6-6-03 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan
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Tanaka Tetsu
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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