Structural and Electrical Properties of P- and B-Doped Polycrystalline Silicon by Plasma-Enhanced CVD at 700℃
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概要
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Undoped, P- and B-doped polycrystalline Si films were prepared on a fused quartz substrate at 700℃ by low-pressure CVD (LPCVD) and plasma-enhanced CVD (PECVD) using the same fabrication system. The effects of plasma supply on the structural and electrical properties were investigated. All of the PECVD films show a strong <110> texture, in contrast with LPCVD films with a nearly random texture. Plasma supply also has the effect of essentially smoothing the surface, independent of the doping level of either dopant, and for improvement of the P- and B-doping efficiency in an intermediate doping range.
- 社団法人応用物理学会の論文
- 1989-04-20
著者
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KURATA Yoshihiro
Department of Electronics, Faculty of Technology, Kanazawa University
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Kurata Y
Precision Technology Development Center Sharp Corporation
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MORITA Minoru
Department of Animal Science, Faculty of Agriculture, Tohoku University
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Hasegawa Seiichi
Department Of Electronics Faculty Of Technology Kanazawa University
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Kurata Yoshihiro
Department Of Electronics Faculty Of Technology Kanazawa University
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Morita Minoru
Department Of Electronics Faculty Of Technology Kanazawa University
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Morita Minoru
Department Of Animal Science Faculty Of Agriculture Tohoku University
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Hasegawa Seiichi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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