Initial Growth of Polycrystalline Silicon Films on Substrates Subjected to Different Plasma Treatments

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-09-15

著者

• Inokuma T

  Department Of Electronics Faculty Of Technology Kanazawa University

• Inokuma Takao

  Department Of Electronics Kanazawa University

• Inokuma Takao

  Department Of Electronics Faculty Of Technology Kanazawa University

• HASEGAWA Seiichi

  Department of Electronics, Faculty of Technology, Kanazawa University

• KURATA Yoshihiro

  Department of Electronics, Faculty of Technology, Kanazawa University

• UCHIDA Noriyuki

  Department of Electronics, Faculty of Technology, Kanazawa University

• TAKENAKA Satoshi

  Department of Electronics, Faculty of Technology, Kanazawa University

• Takenaka Satoshi

  Department Of Electronics Faculty Of Technology Kanazawa University:research And Development Divisio

• Kurata Y

  Precision Technology Development Center Sharp Corporation

• Uchida Noriyuki

  Department Of Electronics Faculty Of Technology Kanazawa University

• Hasegawa Seiichi

  Department Of Electronics Faculty Of Technology Kanazawa University

• Kurata Yoshihiro

  Department Of Electronics Faculty Of Technology Kanazawa University

• Hasegawa Seiichi

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University

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