Electron Spin Resonance Studies on Ion-Implanted Silicon. : II. Conduction Electrons
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概要
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ESR due to conduction electrons and electrical measurements are carried out in parallel with a successive layer removal and annealing for P^+ ion-implanted Si annealed above 600℃. The influence of the lattice defects produced by ion implantation on the ESR signal is investigated. The following interesting results are found. (1) All ESR line widths decrease markedly to a constant value by stripping the thickness corresponding to the damaged region. (2) The g-value is independent of the donor density. (3) The mobility is not appreciably influenced by the defects. The similar experiments are done for a P-diffused Si wafer for comparison. As a result, the following speculation is suggested: The line widths for both the samples do not depend on the donor density in contrast to the bulk materials. The broadening in the surface layer for the ion-implanted Si is due to the remaining defects after annealing. The defects act more strongly on the spin conversion than on the mobility.
- 社団法人応用物理学会の論文
- 1973-08-05
著者
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Hasegawa Seiichi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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KARIMOTO Hiroyasu
Department of Electronics, Faculty of Technology Kanazawa University
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Karimoto Hiroyasu
Department Of Electronics Faculty Of Technology Kanazawa University
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