Isothermal Annealing in P+ Ion-Implanted Silicon
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概要
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The behaviors on isothermal annealing of paramagnetic centers produced by P+ ion implantation into Si (ion energies: 50 and 100 keV; ion doses: $1\times 10^{15}$ and $2\times 10^{14}$ cm-2) and those obtained for Si surface are investigated by ESR measurements. A new method different from the conventional Bemski method is used to obtain the activation energy ($\varDelta E$) for annealing out of the ESR centers with the following results; (1) in case of the presence of several kinds of defects with different time constants, $\varDelta E$ obtained by Bemski method is the average value of $\varDelta E$’s obtained by the present method, and (2) the defects with $\varDelta E$ of 0.6 eV observed in lightly damaged samples and those with $\varDelta E$ of $0.45{\sim}0.5$ eV observed in heavily damaged samples are suggested to be Si-P3 and Si-B2 centers, respectively. Similar experiments are carried out on the electrical activation of the implanted P atoms. Possible processes for the activation are discussed in comparison with the results for the defects.
- 社団法人日本物理学会の論文
- 1975-03-15
著者
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HASEGAWA Seiichi
Department of Electronics, Faculty of Technology, Kanazawa University
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Hasegawa Seiichi
Department Of Electronics Faculty Of Technology Kanazawa University
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Shimizu Tatsuo
Department Of Electronics Faculty Of Technology Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Hasegawa Seiichi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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