Structural Properties of Ultrathin Amorphous Silicon Oxynitride Layers
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概要
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7-nm-thick amorphous silicon oxynitride (a-SiOxNy) layers were prepared at 300°C using a plasma nitridation technique on different types of crystalline Si substrates and under different ammonia flow rates, [NH3]. The compositional and structural properties of the a-SiOxNy layers were examined using current–voltage ($I$–$V$), capacitance–voltage ($C$–$V$), electron spin resonance (ESR), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) measurements. A strong correlation between the changes in the $I$–$V$, $C$–$V$ characteristics and in the ESR spin density ($N_{\text{s}}$) was obtained. The use of low-resistivity Si substrates enabled us to assess simultaneously the changes in the defect density and the electrical properties. Based on the FT-IR results, the changes in the 800 and 1070 cm-1 absorption bands are discussed in connection with the structural change.
- 2003-06-15
著者
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El-oyoun Hussein
Department Of Electronics Faculty Of Technology Kanazawa University
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Inokuma Takao
Department Of Electronics Faculty Of Technology Kanazawa University
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Kurata Yoshihiro
Department Of Electronics Faculty Of Technology Kanazawa University
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Hasegawa Seiichi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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El-Oyoun Hussein
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
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Kurata Yoshihiro
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
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Inokuma Takao
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920-8667, Japan
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