Enhanced Crystallinity at Initial Growth Stage of Microcrystalline Silicon on Corning #7059 Glass Using SiH_2Cl_2
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概要
- 論文の詳細を見る
The crystallinity at the initial growth stage of hydrogenated microcrystalline silicon (μc-Si:H) was greatly improved on Corning #7059 glass substrate with dichlorosilane (SiH_2Cl_2) as the starting gas using conventional (13.56 MHz) capacitively coupled plasma-enhanced chemical vapor deposition system. Deposition studies examined film thickness, substrate temperature, total pressure, electrode distance and H_2-dilution conditions as variables. Through Raman spectroscopy, atomic force microscopy (AFM), spectroscopic ellipsometry, X-ray diffraction (XRD) and Mie scattering measurements, it was found that 〜20 nm sized crystalline Si particles were formed in the plasma region, resulting in the enhanced crystallization from the initial growth stage. The growth kinetics of μc-Si:H from SiH_2Cl_2, compared with that from SiH_4, is described.
- 社団法人応用物理学会の論文
- 1999-05-15
著者
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Shirai Hajime
Department Of Functional Materials And Science Faculty Of Engineering Saitama University
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FUKAI Chisato
Department of Functional Materials Science, Faculty of Engineering, Saitama University
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MORIYA Yoshimizu
Department of Functional Materials Science, Faculty of Engineering, Saitama University
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Fukai C
Saitama Univ. Saitama Jpn
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Fukai Chisato
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Moriya Yoshinori
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Nakamura Takuya
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Nakamura Takuya
Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University
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