Cross-Sectional Transmission Electron Microscope Observation of Small Structures Made by Field-Induced Scanning Tunneling Microscope Fabrication

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-06-30

著者

• HORI Hidenobu

  School of Materials Science,JAIST

• Yamada S

  Electronic Imaging And Devices Research Laboratory Fuji Xerox

• Yamada So

  Electronic Imaging And Devices Research Laboratory Fuji Xerox Co. Lid.

• Aoki N

  School Of Materials Science Japan Advanced Institute Of Science And Technology-hokuriku

• Aoki Nobuyuki

  Department Of Electronics And Mechanical Engineering Chiba University

• Aoki Nobuyuki

  Department Of Materials Technology Chiba University

• Hori H

  Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn

• Hori H

  School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)

• Yamada Shoji

  Shizuoka Institute Of Science And Technology

• OCHIAI Yuichi

  Department of Materials Technology, Chiba University

• YAMADA Satoru

  Research Center for Heavy Ion Medicine, Gunma University

• Aoki N

  Chiba Univ. Chiba Jpn

• HONG Chulun

  Kanagawa Institue of Technology, High-Technology Research Center

• Hong Chulun

  Department Of Electrical And Electronic Engineering Kanagawa Institute Of Technology

• Hon Chulun

  School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)

• Hong Chulun

  School Of Materials Science Jaist-hokuriku

• Yamada S

  Research Center For Heavy Ion Medicine Gunma University

• Ochiai Yuichi

  Department Of Materials Technology Chiba University

• Ochiai Yuichi

  Department Of Materials Science Chiba University

• Kikutani Tomoyuki

  School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)

• Yamada Shoji

  School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)

• Kikutani Tomoyuki

  School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)

• Hori Hidenobu

  School Of Material Science Japan Advanced Institute Of Science And Technology

• OCHIAI Yuichi

  Department of Electronics and Mechanical Engineering, Chiba University

関連論文

• 21aGS-12 グラフェン薄膜における低温磁気抵抗ゆらぎの解析(21aGS 領域7,領域4合同 グラフェン,領域7(分子性固体・有機導体))
• The Haldane State in CsNiCl_3 Detected by Magnetization Measurements:Observation of Quantum-Classical Crossover and the Valence Bond Solid State
• Electron Spin Resonance in One-Dimensional Antiferromagnet CuGeO_3
• 25aRA-10 UV重合C_ナノウィスカーのESRによるFET耐大気性評価(25aRA フラーレン,領域7(分子性固体・有機導体))
• 23aRA-6 SWNTを用いた薄膜FETのSGM評価(23aRA ナノチューブ1,領域7(分子性固体・有機導体))
• 23aRA-5 単層カーボンナノチューブを用いたリング素子の作製(23aRA ナノチューブ1,領域7(分子性固体・有機導体))
• 23aXA-12 グラフェンにおける伝導度ゆらぎの解析とバックゲート依存性(23aXA 量子細線・グラフェン,領域4(半導体メゾスコピック系・局在))
• 23aXA-3 スプリットゲートとエッチングゲートの量子細線における低温電気伝導(23aXA 量子細線・グラフェン,領域4(半導体メゾスコピック系・局在))
• Magnetic Measurements of CuGeO_3 by Means of High Magnetic Field
• Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
• Modeling of Electron Transport in Corrugated Quantum Wires
• Ballistic Weak Localization and Wave Function Scarring in Quantum Wires
• Preparation and Electrochromic Properties of RF-Sputtered NiO_x Films Prepared in Ar / 0_2 / H_2 Atmosphere
• Electrochromic Absorption Spectra of Mo_cW_O_3 Films : A: Applications and Fundamentals
• Absorption Bands of Eleclrochemically-Colored Films of WO_3, MoO_3 and Mo_cW_O_3
• Electron Diffusion in Amorphous Tungsten Oxide Films
• Is There a Magnetic-Field-Induced Breakdown in the Universality of Conductance Fluctuations?
• New Accelerator Facility for Carbon-Ion Cancer-Therapy
• Beam-Profile Control Using an Octupole Magnet
• Chaotic Behavior in the Magneto-Resistance of Quantum Dot and Quantum Point Contact(Quantum Mechanics and Chaos)
• Phase Breaking of Coherent Electron Waves in Dot Array Systems ( Quantum Dot Structures)
• The Role of Electron Phase Coherence in Quantum Transport through Open Ballistic Cavities ( Quantum Dot Structures)
• Trajectory Transition Due to Gate Depletion in Corrugation Gated Quantum Wires
• Electron Wave Interference in Ballistic and Quasi-Ballistic Nanostructures
• Study of Scattering Processes in Quantum Wires by a Correlation Field Analysis of the Phase Coherent Interferences
• The Magnetic Field Dependent Characteristics of Conductance Fluctuations in Ballistic Quantum Dots
• Experimental Determination of the Conduction Width in Quasi Ballistic Wires
• Interference Area of Universal Conductance Fluctuations in Narrow GaAs/AlGaAs Wires
• Evaluation of Antifungal Activity of an Antifungal Drug by In Vitro Simulation of In Vivo Pharmacokinetics of the Drug against Fungal Hyphal Growth
• Transition from Semi-Classical to Quantum Transport in Quasi-Ballistic Wires
• Magnetic Properties of Organic Radical Magnets,MOTMP,MATMP and AOTMP
• Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)
• Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
• Rotational Honeycomb Epitaxy of Ru Thin Films on Sapphire (0001) Substrate : Surfaces, Interfaces, and Films
• Fabrication of Surface Acoustic Wave-Semiconductor Coupled Devices Using Epitaxial Lift-Off Technology
• Photoresponse on Surface Acoustic Wave Devices with Compound Semiconductor and LiNbO_3 Structures
• Cross-Sectional Transmission Electron Microscope Observation of Small Structures Made by Field-Induced Scanning Tunneling Microscope Fabrication
• Normal-Super-Normal Junction Fabricated in a Split-Gate Wire ( Quantum Dot Structures)
• Nano-Fabrication on GaAs Surface by Resist Process with Scanning Tunneling Microscope Lithography ( Scanning Tunneling Microscopy)
• Fabrication of a Split-Gate quantum Wire Having a Ferromagnetic Dot
• Fabrication of Buried Metal Dot Structure in Split-Gate Wire
• Evaluation of Device Charging in Ion Implantation : Ion Beam Process
• Evaluation of Device Charging in Ion Implantation
• The Effect of Cu Additive on A.C. Conductivity in a-As_2Se_3
• Track Center Servo and Radial Tilt Servo System for a Digital Versatile Rewritable Disc(DVD-RAM)
• Threshold Thickness and Magnetic Properties of a Composite Ni/GaAs(001)(Magnetism)
• Non-Linear Transports in Evaporated C_ Cluster Films
• Exchangeability Test on Φ90 mm/600 MB Phase-Change Optical Disks for Common Specifications
• Correlation Field Analysis of the Influence of Device Geometry and Bulk Disorder on Electron Interference in Quantum Wires
• Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation Using Molten Droplets
• Evaluation of the Figure of Merit on Thermoelectric Materials by Harman Method
• A New Method to Estimate Grain Boundary Trap State Density in Poly-Si TFTs
• Device Simulation with Quasi Three-Dimensional Temperature Analysis for Short-Channel Poly-Si Thin-Film Transistor
• Specific Effects of Oxygen Molecule and Plasma on Thin-Film Growth of Y-Ba-Cu-O and Bi-Sr-(Ca)-Cu-O Systems
• Recombination Radiation as Possible Mechanism of Light Emission from Reverse-Biased p-n Junctions under Breakdown Condition
• Second-Harmonic Generation and Relaxation in Polyurea Thin Films Prepared by Vapor Deposition Polymerization
• Bonding Process for Nanoscale Wiring Using Carbon Nanotube by STM Tip
• NMR Study of Field Induced 2-Step Phase Transition in Singlet-Ground-State Antiferromagnet CsFeBr_3
• Nuclear Magnetic Relaxation of Proton in Organic Radial Antiferromagnet BIPNNBNO around Critical Field Region(Low Dimensional Systems, Field-Induced Phase Transitions and Dynamics in Quantum Spin Systems)
• Adaptation of Aspergillus niger to Multiple Agents Whose Action Mechanisms are Different
• Ballistic Spin Transport in Four-Terminal NiFe/In_Ga_As Structure : Semiconductors
• Perpendicular Magnetic Anisotropy in Thin Ni Films on GaAs (001)
• Fabrication of the Si/Al_2O_3/SiO_2/Si Structure Using O_2 Annealed Al_2O_3/Si Structure
• Fabrication of the Si/Al_2O_3/SiO_2/Si Structure by Using the O_2 Annealed Al_2O_3/Si Structure
• Ge Selective Growth on (001) GaAs Substrates by Molecular Beam Epitaxy
• 25aHD-12 半導体量子細線における磁場依存性と解析(25aHD グラフェン・量子細線,領域4(半導体,メゾスコピック系・局在))
• 25pTB-3 多層カーボンナノチューブにおける角度依存磁気抵抗の評価(25pTB ナノチューブ,領域7(分子性固体・有機導体))
• 26pTJ-5 垂直配向型フラーレンウィスカーの成長分析および電気特性(26pTJ フラーレン,領域7(分子性固体・有機導体))
• 26pTJ-2 フラーレンナノウィスカーUV重合体のESRによる評価(26pTJ フラーレン,領域7(分子性固体・有機導体))
• 25aHD-2 グラフェンデバイスにおける磁気伝導とバックゲート依存性(25aHD グラフェン・量子細線,領域4(半導体,メゾスコピック系・局在))
• 26aPS-89 1本のGaNナノコラムの電気伝導(26aPS 領域4ポスターセッション,領域4(半導体,メゾスコピック系・局在))
• A Reply to the Comment of Yamada
• 25pTB-2 走査ゲート顕微法によるSWNTネットワークFETの動作機構の検討(25pTB ナノチューブ,領域7(分子性固体・有機導体))
• Low Temperature High Electron Mobility in In_Ga_As/In_Al_As Modulation-Doped Hetrostructures Grown on GaAs Substrate
• 21aTD-10 フラーレンナノウィスカーの電子物性と結晶成長条件(21aTD フラーレン,領域7(分子性固体・有機導体))
• 21aTD-9 光渦照射によるC_薄膜の光重合化(21aTD フラーレン,領域7(分子性固体・有機導体))
• 21pPSA-6 1本のGaNナノコラムの電気伝導II(21pPSA 領域4ポスターセッション,領域4(半導体,メゾスコピック系・局在))
• 21aTM-3 半導体量子細線における磁場依存性と解析II(21aTM 量子細線・接合系(量子細線・微小接合・ジョセブソン接合),領域4(半導体,メゾスコピック系・局在))
• 21aTG-9 走査ゲート顕微法によるSWNTネットワークFETの動作機構の検討II(21aTG ナノチューブ1,領域7(分子性固体・有機導体))
• 22aTL-6 グラフェンデバイスにおける磁気伝導とバックゲート依存性II(22aTL グラフェン/ディラック電子系,領域4(半導体,メゾスコピック系・局在))
• 21aTG-5 多層カーボンナノチューブにおける角度依存磁気抵抗の評価II(21aTG ナノチューブ1,領域7(分子性固体・有機導体))
• C60 Nanowhisker Field-Effect-Transistor Application for Nano-Electronics
• Bonding Process for Nanoscale Wiring Using Carbon Nanotube by STM Tip
• DC Drift Phenomena in LiNb0, Optical Waveguide Devices
• Chaotic Behavior in the Magneto-Resistance of Quantum Dot and Quantum Point Contact
• Transition from Semi-Classical to Quantum Transport in Quasi-Ballistic Wires
• Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
• Non-equilibrium Phenomenon between Electron and Lattice Systems Induced by the Peltier Effect

もっと見る 閉じる

スポンサーリンク