Ge Selective Growth on (001) GaAs Substrates by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Ge selective growth on SiO_2 patterned (001) GaAs substrates by molecular beam epitaxy (MBE) is demonstrated for the first time. Ge films were grown at substrate temperatures of T_s=500-600℃. In these growth conditions, Ge was grown epitaxially on the GaAs window regions, while numerous Ge grains were observed on the SiO_2 mask. For the sample of T_s=600℃, these grains could be removed easily, resulting selective Ge growth only on the window region. All Ge films have p-type conduction. This is caused by interdiffused Ge and Ga atoms, which is confirmed by secondary ion mass spectroscopy (SIMS) analysis.
- 社団法人応用物理学会の論文
- 1999-04-01
著者
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Hori Hidenobu
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Yamada Syoji
School Of Materials Science Jaist-hokuriku
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Yamada Syoji
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Hori Hidenobu
School Of Material Science Japan Advanced Institute Of Science And Technology
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Inada M
Konan Univ. Kobe Jpn
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INADA Mitsuru
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)
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