Low Temperature High Electron Mobility in In_<0.75>Ga_<0.25>As/In_<0.75>Al_<0.25>As Modulation-Doped Hetrostructures Grown on GaAs Substrate

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概要

• 論文の詳細を見る

• We have grown In_<0.75>Ga_<0.25>As/In_<0.75>Al_<0.25>As modulation-doped hetrostructure on GaAs substrate via InAlAs step-graded buffer by molecular beam epitaxy and obtained electron mobilities of 175,000 and 397,000cm^2/V・s at 77 and 4.2K respectively, those of which are the highest ones ever reported in this materials system. Comparing the results with those of In_<0.75>Ga_<0.25>As/In_<0.66>A_<0.34>As and In_<0.5>Ga_<0.5>As/In_<0.5>Al_<0.5>As heterostructures grown similarly, it is concluded that the high mobility was attained due to the reduced alloy scattering under the strain-free interface condition and to the reduced electron effective mass (0.040m_0 from far-infrared measurement).

• 社団法人応用物理学会の論文
• 1998-12-15

著者

• Hong Chulun

  School Of Materials Science Jaist-hokuriku

• Yamada Syoji

  School Of Materials Science Jaist-hokuriku

• Gozu Shin-ichirou

  School Of Materials Science Jaist-hokuriku

• GONG Chulun

  School of Materials Science, JAIST-Hokuriku

• Gong Chulun

  School Of Materials Science Jaist-hokuriku

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• Low Temperature High Electron Mobility in In_Ga_As/In_Al_As Modulation-Doped Hetrostructures Grown on GaAs Substrate
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