Fabrication of Buried Metal Dot Structure in Split-Gate Wire
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-06-30
著者
-
Aoki N
School Of Materials Science Japan Advanced Institute Of Science And Technology-hokuriku
-
Aoki Nobuyuki
Department Of Materials Technology Chiba University
-
Hori Hidenobu
Japan Advanced Institute Of Science And Technology Jaist
-
Aoki N
Chiba Univ. Chiba Jpn
-
Oki Akio
Trw Electronics And Technology Division
-
Kikutani Tomoyuki
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)
-
AOKI Nobuyuki
Japan Advanced Institute of Science and Technology (JAIST)-Hokuriku
-
KIKUTANI Tomoyuki
Japan Advanced Institute of Science and Technology (JAIST)-Hokuriku
-
OKI Akio
Japan Advanced Institute of Science and Technology (JAIST)-Hokuriku
-
YAMADA Syoji
Japan Advanced Institute of Science and Technology (JAIST)-Hokuriku
-
FUKUHARA Keizo
Japan Advanced Institute of Science and Technology (JAIST)
-
Kikutani Tomoyuki
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
-
Hori Hidenobu
Japan Advanced Institute of Science and Technology (JAIST)-Hokuriku,
関連論文
- Local Structure around Mn in Ferromagnetic GaMnN Film Studied by X-Ray Absorption Fine Structure : Short Note
- High-Tc ferromagnetism in diluted magnetic semiconducting GaN: Mn films
- Enhancement-Mode InGaAS/InAlAs/InP High Electon Mobility Transistor with 0.1 μm Gate
- Cross-Sectional Transmission Electron Microscope Observation of Small Structures Made by Field-Induced Scanning Tunneling Microscope Fabrication
- Normal-Super-Normal Junction Fabricated in a Split-Gate Wire ( Quantum Dot Structures)
- Nano-Fabrication on GaAs Surface by Resist Process with Scanning Tunneling Microscope Lithography ( Scanning Tunneling Microscopy)
- Fabrication of a Split-Gate quantum Wire Having a Ferromagnetic Dot
- Fabrication of Buried Metal Dot Structure in Split-Gate Wire
- Evaluation of Device Charging in Ion Implantation : Ion Beam Process
- Evaluation of Device Charging in Ion Implantation
- High Reliability of 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistors Microwave Monolithic Integrated Circuit on 3-inch InP Substrates
- Properties of ferromagnetic Ga1-xMnxN films grown by ammonia-MBE
- Perpendicular Magnetic Anisotropy in Thin Ni Films on GaAs (001)
- Evaluation of the Figure of Merit of Thermoelectric Modules by Harman Method
- Normal-Super-Normal Junction Fabricated in a Split-Gate Wire