High Reliability of 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistors Microwave Monolithic Integrated Circuit on 3-inch InP Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-28
著者
-
GRUNDBACHER Ronald
TRW Electronics and Technology Division
-
LAI Richard
TRW Electronics and Technology Division
-
BARSKY Michael
TRW Electronics and Technology Division
-
CHOU Yeong-Chang
TRW Electronics and Technology Division
-
OKI Aaron
TRW Electronics and Technology Division
-
Barsky Mike
Trw Electronics And Technology Division
-
Liu Po-hsin
Trw Electronics And Technology Division
-
Oki Akio
Trw Electronics And Technology Division
-
Streit Dwight
Trw Electronics And Technology Division
-
Streit Dwight
Trw Electronic Systems And Technology Division
-
LEUNG Denise
TRW Electronics and Technology Division
-
GRUNDBACHER Ron
TRW Electronics and Technology Division
-
SCARPULLA John
TRW Electronics and Technology Division
-
NISHIMOTO Matt
TRW Electronics and Technology Division
-
ENG David
TRW Electronics and Technology Division
関連論文
- Enhancement-Mode InGaAS/InAlAs/InP High Electon Mobility Transistor with 0.1 μm Gate
- Normal-Super-Normal Junction Fabricated in a Split-Gate Wire ( Quantum Dot Structures)
- Fabrication of a Split-Gate quantum Wire Having a Ferromagnetic Dot
- Fabrication of Buried Metal Dot Structure in Split-Gate Wire
- High Reliability of 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistors Microwave Monolithic Integrated Circuit on 3-inch InP Substrates
- High Volume Production of Heterojunction Bipolar Transistors