Enhancement-Mode InGaAS/InAlAs/InP High Electon Mobility Transistor with 0.1 μm Gate
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-28
著者
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Block T
Trw Electronics And Technology Division
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GRUNDBACHER Ronald
TRW Electronics and Technology Division
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LAI Richard
TRW Electronics and Technology Division
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BARSKY Michael
TRW Electronics and Technology Division
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TSAI Roger
TRW Electronics and Technology Division
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DIA Rosalinda
TRW Electronics and Technology Division
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CHOU Yeong-Chang
TRW Electronics and Technology Division
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TRAN Liem
TRW Electronics and Technology Division
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CAVUS Abdullah
TRW Electronics and Technology Division
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BLOCK Thomas
TRW Electronics and Technology Division
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OKI Aaron
TRW Electronics and Technology Division
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Barsky Mike
Trw Electronics And Technology Division
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Oki Akio
Trw Electronics And Technology Division
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GRUNDBACHER Ron
TRW Electronics and Technology Division
関連論文
- Enhancement-Mode InGaAS/InAlAs/InP High Electon Mobility Transistor with 0.1 μm Gate
- Normal-Super-Normal Junction Fabricated in a Split-Gate Wire ( Quantum Dot Structures)
- Fabrication of a Split-Gate quantum Wire Having a Ferromagnetic Dot
- Fabrication of Buried Metal Dot Structure in Split-Gate Wire
- High Reliability of 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistors Microwave Monolithic Integrated Circuit on 3-inch InP Substrates