Normal-Super-Normal Junction Fabricated in a Split-Gate Wire

概要

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The fabrication and low temperature transport properties of a new class of quantum structures which have a buried superconductor dot in a split-gate wire are described. To create such a structure, we employed a combined scanning electron microscope (SEM)/scanning tunneling microscope (STM) and performed a two-step fabrication process using a tip-induced field and thermal evaporation. We chose indium as a superconductor material and the dot size at the two dimensional electron gas (2DEG) plane was about 100 nm. Such a structure is expected to form a normal (2DEG)-super (In dot)-normal (2DEG) double tunneling junction when the wire is properly squeezed. In transport experiments at 0.3 K, different conductance step behavior and different nonlinear current-voltage characteristics were observed in the systems with and without an In dot.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1997-06-30