Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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Ohdaira Keisuke
Green Devices Research Center, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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Koyama Koichi
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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Hayakawa Taro
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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Nakashima Yuki
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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