Nakashima Yuki | Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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概要
- Nakashima Yukiの詳細を見る
- 同名の論文著者
- Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japanの論文著者
関連著者
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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Koyama Koichi
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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Hayakawa Taro
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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Nakashima Yuki
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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Ohdaira Keisuke
Green Devices Research Center, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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Ohdaira Keisuke
Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn
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Miyamoto Motoharu
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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Ohta Tatsunori
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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Matsumura Hideki
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
著作論文
- Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals
- Effect of Radical-Doped n+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition
- Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals