Koyama Koichi | Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
スポンサーリンク
概要
- Koyama Koichiの詳細を見る
- 同名の論文著者
- Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japanの論文著者
関連著者
-
Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
-
Koyama Koichi
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
-
Hayakawa Taro
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
-
Nakashima Yuki
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
-
Ohdaira Keisuke
Green Devices Research Center, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
-
Ohdaira Keisuke
Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn
-
Miyamoto Motoharu
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
-
Ohta Tatsunori
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
-
Matsumura Hideki
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
著作論文
- Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals
- Effect of Radical-Doped n+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition
- Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals