High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
Polycrystalline silicon (poly-Si) films with a thickness over 1 μm are formed by the flash lamp annealing (FLA), with a duration of less than 10 ms, of precursor amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) on quartz substrates. Thicker a-Si films can be crystallized under lower lamp irradiance, which can be understood by considering both the total generated heat in the a-Si films and the thermal diffusion into the quartz substrates. Results of microwave photoconductivity decay (μ-PCD) measurement indicate that high-pressure water vapor annealing (HPWVA) is effective for improving the minority carrier lifetime of the poly-Si films. The film with a thickness of 1.5 μm crystallized under a high lamp irradiance shows minority carrier lifetimes over 5 μs, indicating the high feasibility of applying the crystalline film to high-efficiency thin-film solar cells.
- The Japan Society of Applied Physicsの論文
- 2007-11-06
著者
-
Ohdaira Keisuke
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
-
Ohdaira Keisuke
Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn
関連論文
- Selection of material for the back electrodes of thin-film solar cells using polycrystalline silicon films formed by flash lamp annealing (Special issue: Solid state devices and materials)
- Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
- Study on stability of amorphous silicon thin-film transistors prepared by catalytic chemical vapor deposition
- Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
- Drastic Improvement of Minority Carrier Lifetimes Observed in Hydrogen-Passivated Flash-Lamp-Crystallized Polycrystalline Silicon Films
- Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
- Selection of Material for the Back Electrodes of Thin-Film Solar Cells Using Polycrystalline Silicon Films Formed by Flash Lamp Annealing
- Formation of Several-Micrometer-Thick Polycrystalline Silicon Films on Soda Lime Glass by Flash Lamp Annealing
- Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrate
- Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
- Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing