Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing
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概要
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High-pressure water-vapor annealing (HPWVA) is performed on 3-μm-thick polycrystalline silicon (poly-Si) films formed on glass substrates by crystallizing electron-beam (EB)-evaporated precursor amorphous Si (a-Si) films by flash lamp annealing (FLA). HPWVA at higher temperature and pressure tends to result in a lower defect density of FLC poly-Si films. The defect density of FLC poly-Si films can be reduced from {\sim}3\times 10^{17} to {\sim}2\times 10^{16}/cm<sup>3</sup>when the HPWVA temperature is 500 °C and the pressure is more than 8 MPa, which is sufficiently of device grade. The annealing of flash-lamp-crystallized (FLC) poly-Si films under inert-gas atmosphere does not lead to sufficient reduction in their defect density, indicating the necessity of water vapor during annealing.
- 2013-04-25
著者
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Ohdaira Keisuke
Japan Advanced Inst. Of Sci. And Technol. (jaist) Asahidai Nomi-shi Ishikawa-ken 923-1292 Jpn
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Ohdaira Keisuke
Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan
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