Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
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概要
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We realized a bulk Si1-xGex single crystal with a graded Ge content of $x=0.6--1$ by gradually changing the growth temperature and utilized it as a substrate with a lateral variation in Ge content for the epitaxial growth of Si0.27Ge0.73. This permits a systematic change in lattice mismatch between the film and the substrate in a single sample. In fact, a systematic variation in the surface morphology of the SiGe epitaxial film was observed to depend on the sign and amount of strain. This demonstrates that our technique utilizing a compositionally graded bulk crystal as a substrate with a lateral variation in alloy content is useful for materials research.
- 2009-11-25
著者
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Usami Noritaka
Institute For Material Research Tohoku University
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Nakajima Kazuo
Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Nakajima Kazuo
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
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Nihei Ryota
Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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