Successful Growth of InxGa1-xAs ($x>0.18$) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
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概要
- 論文の詳細を見る
We attempted to utilize a GaAs single crystal with preferential orientation as a seed to obtain an InGaAs single bulk crystal. The preferential orientation of the InGaAs bulk crystal was determined as [110] in a preliminary experiment to utilize multiple seed crystals with random orientations. By subsequent zone growth of InGaAs on GaAs(110), an InxGa1-xAs ($x>0.18$) single bulk crystal with a diameter of 15 mm and a length of 13 mm was successfully obtained on the seed without a compositionally graded InGaAs layer. The large lattice mismatch between GaAs and InGaAs was likely to be accommodated by an array of thin columnar grains at the interface.
- Japan Society of Applied Physicsの論文
- 2004-07-01
著者
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Usami Noritaka
Institute For Material Research Tohoku University
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Fujiwara Kozo
Institute For Materials Research (imr) Tohoku University
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NISHIJIMA Yoshito
Fujitsu Laboratories Ltd.
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Azuma Yukinaga
Institute For Materials Research (imr) Tohoku University
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Ujihara Toru
Institute For Materials Research (imr) Tohoku University
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Nakajima Kazuo
Institute For Materials Research (imr) Tohoku University
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Azuma Yukinaga
Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-857, Japan
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Fujiwara Kozo
Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-857, Japan
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Usami Noritaka
Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-857, Japan
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Nakajima Kazuo
Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-857, Japan
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Nakajima Kazuo
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
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Ujihara Toru
Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-857, Japan
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