Structure and Surface Properties of Metalorganic Vapor Phase Epitaxial CdTe and HgCdTe(111)B Layers Grown on Vicinal GaAs(100) Subatrates

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概要

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• We achieved the HgCdTe(111)B layer with a specular surface and high structural quality, which was the candidate material for IRFPA application, on GaAs(100) by metalorganic vapor phase epitaxy. To realize such superior layers, we studied the structure and surface morphology of CdTe and HgCdTe(111)B with concerning the growth mechanism. We found twins in CdTe were originated both at the CdTe-GaAs interface and during the subsequent CdTe growth. These twins could be eliminated by using misoriented substrates and adjusting the VI/II ratio conditions. Suitable conditions for suppressing twins also improved the CdTe surface morphology. We clarified the CdTe crystal perfection was improved effectively by decreasing the growth rate. This attractive CdTe buffer was necessary for a twin-free HgCdTe(111)B layer whose dislocation density was small. We obtained HgCdTe layers with good structural quality and smooth surface morphology under the large VI/II ratio condition, similar to the case of CdTe growth.

• 社団法人応用物理学会の論文
• 1999-10-15

著者

• NISHIJIMA Yoshito

  Fujitsu Laboratories Ltd.

• Nishino Hironori

  Fujitsu Laboratories Ltd.

• Murakami Satoshi

  Fujitsu Laboratories Ltd.

• Murakami S

  Fujitsu Laboratories Ltd.

関連論文

• Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
• 1.3 μm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates
• Structure and Surface Properties of Metalorganic Vapor Phase Epitaxial CdTe and HgCdTe(111)B Layers Grown on Vicinal GaAs(100) Subatrates
• Successful Growth of InxGa1-xAs ($x>0.18$) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation

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