Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)

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概要

• 論文の詳細を見る

• In this article, we review the present status of research on semiconducting BaSi_2 toward Si-based crystalline thin-film solar cells. The epitaxial growth by molecular beam epitaxy, control of the type of conductivity and carrier concentration by impurity doping, photoresponse properties, formation of a heavily-doped tunneling junction at the BaSi_2/Si heterointerface, and demonstration of the solar cell operation on an n-BaSi_2/p^+-Si single heterojunction diode are shown.

• 社団法人電子情報通信学会の論文
• 2010-06-23

著者

• USAMI Noritaka

  Institute for Materials Research, Tokoku University

• Usami Noritaka

  Institute Of Materials Research Tohoku University

• Usami Noritaka

  Institute For Material Research Tohoku University

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba

• OKADA Atsushi

  Institute of Applied Physics, University of Tsukuba

• SAITO Takanobu

  Institute of Applied Physics, University of Tsukuba

• TOH Katsuaki

  Institute of Applied Physics, University of Tsukuba

• Khan M.

  Institute of Applied Physics, University of Tsukuba

• Toh Katsuaki

  Institute Of Applied Physics University Of Tsukuba

• Saito Takanobu

  Institute For Materials Research

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• Okada Atsushi

  Institute Of Applied Physics University Of Tsukuba

• Saito Takanobu

  Institute Of Applied Physics University Of Tsukuba

• Khan M.

  Institute Of Applied Physics University Of Tsukuba

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

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