High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-03-01
著者
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SAZAKI Gen
Institute of Materials Science, Tohoku University
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USAMI Noritaka
Institute for Materials Research, Tokoku University
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FUJIWARA Kozo
Institute for Materials Research (IMR), Tohoku University
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NAKAJIMA Kazuo
Institute for Materials Research (IMR), Tohoku University
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SHISHIDO Toetsu
Institute for Materials Research (IMR), Tohoku University
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Ujihara Toru
Institute For Materials Research Tohoku University
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Fujiwara Kozo
Institute For Materials Research Tohoku University
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OBARA Kazuo
Instiute for Materials Reseach, Tohoku University
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Shishido T
Tohoku Univ. Sendai
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