Electrical and Magnetic Properties of the High-T_c Superconductors (Y_<1-x>M_x)Ba_2Cu_3O_y and Y(Ba_<1-x>M_x)_2Cu_3O_y (M=Mg, Ca, Sr, Ba)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-01
著者
-
FUJIWARA Kozo
Institute for Materials Research (IMR), Tohoku University
-
FUJIWARA Katsuyuki
Nagano Technical College
-
Fujiwara K
Institute For Materials Research (imr) Tohoku University
-
KEBUKAWA Takeji
Faculty of Education, Shinshu University
-
TATSUMI Yukichi
Faculty of Education, Shinshu University
-
MISAWA Yutaka
Faculty of Education, Shinshuu University
-
Tatsumi Y
Shinshuu Univ. Nagano
-
Tatsumi Yukichi
Faculty Of Education Shinshuu University
-
Kebukawa T
Osaka Univ. Toyonaka
-
Kebukawa Takeji
Faculty Of Education Shinshu University
-
Misawa Yutaka
Faculty Of Education Shinshuu University
-
Fujiwara Katsuyuki
Nagano National College Of Technology
-
Kebukawa T
Faculty Of Education Shinshu University
関連論文
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
- Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
- Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
- On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
- Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
- Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
- Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
- Etch-Back Planarization Technique for Multilevel Metallization
- Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
- Nuclear Magnetic Resonances of^Y and^Al in Y (Fe_Al_x)_2
- NMR Study of ^Al in (Gd_1-xTb_x) Al_2
- NMR Study of (^Al) in (Gd_Dy_x) Al_2
- Novel Dual Wavelength Electro-Optical Bistability in InGaAs/AlGaAs Multiple Quantum Wells
- Dual Wavelength Electro-Optical Bistability in an Asymmetric Self-Electro-Optic Effect Device
- Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
- On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
- Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells
- Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
- Vanishing of Negative Differential Resistance Region due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
- Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
- Hydrogen-Absorption Effect on YBa_2Cu_3O_x
- Miniband Edge Optical Transitions in Photocurrent Spectra of GaAs/AlAs Superlattices
- Transmission Self-Electro-Optic Effect Devices Based on Wannier-Stark Localization in a GaAs/AlAs Superlattice
- Electrical and Magnetic Properties of the High-T_c Superconductors (Y_M_x)Ba_2Cu_3O_y and Y(Ba_M_x)_2Cu_3O_y (M=Mg, Ca, Sr, Ba)
- Structure of the Natural Oxide of Amorphous Silicon
- Densimetry of Amorphous Silicon Films by Using a Quartz Oscillator
- Effect of Hydrogen Absorption on the Magnetic Properties of Pseudobinary Intermetallics Y (Mn_T_x)_2(T=Al,Co and Ni)
- Effects of Substitution by Group Ia and IIIa Elements on Superconducting Properties of YBa_2Cu_3O_y
- Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
- In-Plane Photocurrent Spectroscopy of Undoped GaAs/AlAs Quantum Well Heterostructures : Surfaces, Interfaces and Films
- The Magnetic Properties of GdCo_2 Compound and Its Hydrides
- Hyperfine Fields at ^Y Nuclei in Y (Fe_T_x)_2 (T=V,Mn,Co,Ni,Al) with Low Concentrations x
- Theory of ac Josephson Effect in Superfluid Helium
- One-Dimensional Many-Fermion System. II : Spin Eigenstates and Their Structure : Condensed Matter and Statistical Physics
- Reduced Model of Anderson-Hamiltonian. II : Exact Spin Eigenstates : Condensed Matter and Statistical Physics
- Electro-Optical Bistability and Multistability in GaAs/AlAs Superlattices with Different Miniband Widths
- Room Temperature Stark-Ladder Transitions in GaAs/AlAs Superlattices with Different Miniband Widths
- NMR Study of ^Co in Gd_Y_x (Fe_Co_)_2 and Gd_Y_x (Fe_Co_)_2
- One-Dimensional s-d Model. I : Exact Solution in a Field Theoretical Framework : Condensed Matter and Statistical Physics