On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-06-20

著者

• Tokuda Y

  Mitsubishi Electric Corp. Hyogo Jpn

• Tokuda Yasunori

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Tokuda Yasunori

  Central Research Laboratory Mitsubishi Electric Corporation

• FUJIWARA Kozo

  Institute for Materials Research (IMR), Tohoku University

• Kanamoto Kyozo

  Central Research Laboratory Mitsubishi Electric Corporation

• FUJIWARA Kenzo

  Central Research Laboratory, Mitsubishi Electric Corporation

• NAKAYAMA Takashi

  Central Research Laboratory, Mitsubishi Electric Corporation

• NISHIKAWA Yasumi

  Central Research Laboratory, Mitsubishi Electric Corporation

• Fujiwara K

  Institute For Materials Research (imr) Tohoku University

• Fujiwara Kenzo

  Central Research Laboratory Mitsubishi Electric Corporation

• Tokuda Yasunori

  Advanced R&d Technology Center Mitsubishi Electric Corporation

• Nakayama T

  Chiba Univ. Chiba Jpn

• Nishikawa Yasumi

  Central Research Laboratory Mitsubishi Electric Corporation

• NAKAYAMA Takashi

  Department of Physics, Faculty of Science, Chiba University

関連論文

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• Influence of Impurities on the Growth of Tin Whiskers
• Optical 3R Wavelength Conversion by a combination of Self-pulsating DFB Laser and SOA-based Mach-Zehnder Interferometer
• High-Temperature Solution Growth and Characterization of Chromium Disilicide
• Electronic Structures and Optical Properties of (GaP)_n(AIP)_n Short-PeriodSuperlattices with n=1 to 6
• Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
• Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
• Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
• Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
• On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
• Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
• Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
• Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
• Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
• Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
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• Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
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• First Operation of AlGaN Channel High Electron Mobility Transistors
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• Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
• Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
• Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
• Vanishing of Negative Differential Resistance Region due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
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• Miniband Edge Optical Transitions in Photocurrent Spectra of GaAs/AlAs Superlattices
• Transmission Self-Electro-Optic Effect Devices Based on Wannier-Stark Localization in a GaAs/AlAs Superlattice
• Electrical and Magnetic Properties of the High-T_c Superconductors (Y_M_x)Ba_2Cu_3O_y and Y(Ba_M_x)_2Cu_3O_y (M=Mg, Ca, Sr, Ba)
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• Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
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• Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
• Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
• Photoluminescence of a Novel Hetero n-i-p-i Structure Incorporating Triple Quantum Wells
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