All-Optical Clock Recovery and Wavelength Conversion by Combination of Self-Pulsation Laser and Semiconductor-Optical-Amplifier-Based Mach–Zehnder Interferometer
スポンサーリンク
概要
- 論文の詳細を見る
Distributed feedback (DFB) self-pulsating lasers (SP-LDs) and a monolithically integrated semiconductor-optical-amplifier (SOA)-based Mach–Zehnder interferometer (SOA-MZI) were fabricated. Frequency-selective pulsation at 10 and 40 GHz was demonstrated for a self-pulsating DFB laser by adjusting driving conditions. Self-pulsation at 40 GHz was based on a beating-type oscillation mechanism, whereas self-pulsation at 10 GHz was based on a dispersive Q-switching mechanism, where a sideband of the DFB stopband operated as a dispersive mirror. Injection locking phenomena and optical clock regeneration were also confirmed for both frequencies. All-optical wavelength conversion of 10 Gbps return-to-zero pseudo random binary sequence (RZ-PRBS) optical signal with timing jitter reduction was successfully demonstrated by a hybrid combination of SP-LD and SOA-MZI for a wide wavelength range of input signal.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
-
GOTODA Mitsunobu
Advanced Technology R&am;D Center, Mitsubishi Electric Corporation
-
MATSUMOTO Keisuke
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
-
TAKAGI Kazuhisa
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
-
AOYAGI Toshitaka
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
-
Nishikawa Satoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
-
Nishimura Tetsuya
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Hatta Tatsuo
Information Technology R & D Center Mitsubishi Electric Corp.
-
Aoyagi Toshitaka
High Frequency and Optical Device Works, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664-8641, Japan
-
Hatta Tatsuo
Information Technology R&D Center, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664-8641, Japan
-
Miyahara Toshiharu
Information Technology R&D Center, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664-8641, Japan
-
Miyahara Toshiharu
Information Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
-
Matsumoto Keisuke
High Frequency and Optical Device Works, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664-8641, Japan
関連論文
- Electron Localization due to Symmetry Breaking in Nonlinear Coupled-Quantum Systems
- Optical 3R Wavelength Conversion by a combination of Self-pulsating DFB Laser and SOA-based Mach-Zehnder Interferometer
- Polymeric Waveguide Optical Switch Using Rotary Drive Mechanism
- Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
- Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
- First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
- Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications
- Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
- On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
- Very High Frequency Self-Pulsation and Stable Optical Injection Locking for Well-Defined Multi-Electrode Distributed Feedback Lasers
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
- Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
- Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
- Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
- Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
- Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
- Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
- Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
- Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
- Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
- Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
- Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
- Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
- Photoluminescence of a Novel Hetero n-i-p-i Structure Incorporating Triple Quantum Wells
- Transient Photocurrent Based on Photoinduced Electron Transfer Processes in Flavin-Porphyrin Hetero Langmuir-Blodgett Monolayers
- Passively Mode-Locked Pulse Generation at 40 GHz Repetition Rate by Semiconductor Lasers with Distributed Bragg Reflector for Oscillating Mode Control
- p-Substrate Partially Inverted Buried Heterostructure Distributed Feedback Laser Diode Performance Improvement by Inserting Zn Diffusion-Stopping Layer
- A Novel Fabrication Technique of Long Period Fiber Gratings Using a Holographic Optical Element
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- SB-12-11 Transfer-molded WDN Transceiver Module for FTTH
- First Operation of AlGaN Channel High Electron Mobility Transistors
- Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
- Lasing Mechanism Analysis of Self-Pulsating Distributed Feedback Laser Diodes and Successful Demonstration of All-Optical Signal Recovery at 40 Gbps
- Electric-Field-Induced Fluorescence Quenching in a Metal-Insulator-Metal Device Composed of Flavin-Porphyrin Hetero-Type Langmuir-Blodgett Films
- Photoelectric Properties Based on Electric Field Modulation of Photoinduced Electron Transfer Processes in Flavin-Porphyrin Hetero-type Langmuir–Blodgett Films
- X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- All-Optical Clock Recovery and Wavelength Conversion by Combination of Self-Pulsation Laser and Semiconductor-Optical-Amplifier-Based Mach–Zehnder Interferometer
- Four-Channel Integrated Receiver with a Built-In Spatial Demultiplexer Optics for 100Gb/s Ethernet
- Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
- Passively Mode-Locked Pulse Generation at 40 GHz Repetition Rate by Semiconductor Lasers with Distributed Bragg Reflector for Oscillating Mode Control
- Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition