Electron Localization due to Symmetry Breaking in Nonlinear Coupled-Quantum Systems
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-06-15
著者
-
Nunoshita M
Graduate School Of Materials Science Nara Institute Of Science And Technology
-
Nunoshita M
Mitsubishi Electric Corp. Hyogo Jpn
-
Nunoshita Masahiro
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Nunoshita Masahiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
-
TSUKADA Noriaki
Department of Electronics and Information Engineering
-
NISHINO Taneo
Department of Electrical and Electronics Engineering, Kobe University
-
GOTODA Mitsunobu
Advanced Technology R&am;D Center, Mitsubishi Electric Corporation
-
ISU Toshiro
Advanced Technology R&am;D Center, Mitsubishi Electric Corporation
-
Nishino T
Mie Univ. Tsu Jpn
-
Nishino Taneo
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
-
Isu T
Mitsubishi Electric Corp. Amagasaki‐shi Jpn
-
Isu T
Semiconductor Research Laboratory Mitsubishi Electric Corporation
-
Isu Toshiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
-
Isu Toshiro
Optoelectronics Technology Research Laboratory
-
Tsukada N
Aomori Univ. Aomori Jpn
-
Tsukada Noriaki
Department Of Electrical And Digital Systems Engineering Hiroshima Institute Of Technology
-
Gotoda Mitsunobu
Advanced Technology R&am;d Center Mitsubishi Electric Corporation
関連論文
- 21pEA-5 Wilson数値くりこみ群のスケールフリー性(21pEA 電子系・量子スピン系,領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- 25pQD-8 DMRGから派生したテンソルネットワーク形式(密度行列繰り込み群(DMRG)の新展開,領域11,領域3,領域5,領域8合同シンポジウム,領域5,光物性)
- 双曲平面上の古典格子模型と1次元量子系と1粒子量子力学 (量子科学における双対性とスケール)
- 25pQD-8 DMRGから派生したテンソルネットワーク形式(領域11,領域3,領域5,領域8合同シンポジウム:密度行列繰り込み群(DMRG)の新展開,領域3,磁性,磁気共鳴)
- 25pQD-8 DMRGから派生したテンソルネットワーク形式(領域11,領域3,領域5,領域8合同シンポジウム:密度行列繰り込み群(DMRG)の新展開,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- ガラス板の隙間に生じる干渉縞(談話室)
- 26pQK-10 双曲変形による一次元量子スピン鎖の励起ギヤップ評価(量子スピン系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- 22pEH-15 一次元量子スピン鎖の励起ギャップ評価 : 双曲変形を用いたスケーリング解析(22pEH 量子スピン系,領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- DC Superconducting Quantum Interference Devices with BiSrCaCuO Bicrystal Grain Boundary Junctions at 77 K
- Ba_K_xBiO_3 Grain Boundary Junctions on a MgO Bicrystal Substrate
- Hysteretic Josephson Junction Behavior of Ba_K_xBiO_3 Grain Boundary Junctions Using SrTiO_3 Bicrystal Substrates
- Dielectric Properties of (Ba,Sr)TiO_3 Thin Films Deposited by RF Sputtering
- A Vision Chip with Column-Level Amplification of Optical Data Signals for Indoor Optical Wireless Local Area Networks
- Preliminary Demonstration of 1.0V CMOS Imager with Semi-Pixel-Level ADC Based on Pulse-Width-Modulation Pixel Readout(VLSI Technology toward Frontiers of New Market)
- Development of a CMOS-based Neural Imaging and Interface Device
- Development of a multi-chip retinal stimulator for in vivo experiments toward retinal prosthesis
- CMOS Optical Polarization Analyzer Chip for μTAS
- A low-voltage PWM CMOS imager with small pixel size using an in-pixel gate-common comparator
- Large scale electrode array based on distributed microchip architecture for retinal prosthesis
- Development of a CMOS Image Sensor for Real Time In Vivo Imaging of the Protease Activity Inside the Mouse Hippocampus
- Optimization of Electrical Stimulus Pulse Parameter for Low-Power Operation of Retinal Prosthetic Device
- A 128×128 Pixel Complementary Metal Oxide Semiconductor Image Sensor with an Improved Pixel Architecture for Detecting Modulated Light Signals
- A CMOS Image Sensor for in vitro and in vivo Imaging of the Mouse Hippocampus
- Flexible and Extendible Neural Stimulation Device with Distributed Multichip Architecture for Retinal Prosthesis
- A Pulse Modulation CMOS Image Sensor with 120dB Dynamic Range and 1nW/cm^2 Resolution for Bioimaging Applications
- A Flexible and Extendible Neural Stimulation Device with Distributed Multi-chip Architecture for Retinal Prosthesis
- Building a Simple Model of a Pulse-Frequency-Modulation Photosensor and Demonstration of a 128×128-pixel Pulse-Frequency-Modulation Image Sensor Fabricated in a Standard 0.35-μm Complementary Metal-Oxide Semiconductor Technology
- A high-sensitive digital photosensor using MOS interface-trap charge pumping
- A Study of Bending Effect on Pulse-Frequency-Modulation-Based Photosensor for Retinal Prosthesis
- Proposal and Preliminary Experiments of Indoor Optical Wireless LAN Based on a CMOS Image Sensor with a High-Speed Readout Function Enabling a Low-Power Compact Module with Large Uplink Capacity(The IEICE Transactions on Communications, Vol.E86-B, No.5)
- Self-Pulsation of a Nd^-Doped Fluoride Fiber Laser Using Tm^-Doped Fiber as a Saturable Absorber(Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Self-Pulsation of a Nd^-Doped Fluoride Fiber Laser Using Tm^-Doped Fiber as a Saturable Absorber (IEICE Trans., Electron., Vol. E86-C, No. 5, Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Laser-Induced Enhancement of Electron-Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well
- Electron Localization due to Symmetry Breaking in Nonlinear Coupled-Quantum Systems
- ac Field-Induced Localization of an Electron in a Double-Well Quantum Structure
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- 23pTE-5 Wilson数値くりこみ群のスケールフリー性II(23pTE 電子系,領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- Optical 3R Wavelength Conversion by a combination of Self-pulsating DFB Laser and SOA-based Mach-Zehnder Interferometer
- Dynamic process of anti-Stokes photoluminescence at a long-range-ordered Ga0.5In0.5P/GaAs heterointerface
- 26pQK-9 OpenではないOpen Boundary Conditionとは何やねん?(量子スピン系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- 繰り込みか?それとも変分か? : 双曲変形という考え方(京都大学基礎物理学研究所研究会 密度行列繰り込み群法を用いた物性研究の新展開,研究会報告)
- 双曲平面上のイジング模型が示す臨界現象 (繰りこみ群の数理科学での応用)
- 23aWD-2 双曲平面上で角転送行列繰込みやってみよか(古典・量子スピン系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- 23aWD-3 双曲平面における統計模型の臨界現象(古典・量子スピン系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- 22pTS-1 最適な有限領域の数値繰込み群(古典スピン系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- 19pWA-13 有限サイズクラスターに適用する「DMRGモドキ」なアルゴリズム(フラストレート系,古典スピン系,領域11,統計力学,物性基礎論,応用数学,力学,流体物理)
- Electrical Characterization of Au/p-ZnSe Structure
- Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn and H_2Se
- Blue Light Emitting Laser Diodes Based on ZnSe/ZnCdSe Structure Grown by Gas Source Molecular Beam Epitaxy
- Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices
- Hydrogen Passivation of Polysilicon Thin-Film Tramsistors by Electron Cyclotron Resonance Plasma
- A Novel Fabrication Method for Polycrystalline Silicon Thin-Film Transistors with a Self-Aligned Lightly Doped Drain Structure
- Proposal and Preliminary Experiments of Indoor Optical Wireless LAN Based on a CMOS Image Sensor with a High-Speed Readout Function Enabling a Low-Power Compact Module with Large Uplink Capacity ( Recent Progress in Optoelectronics an
- Reactive Ion Etching of BiSrCaCuO Superconducting Thin Films using Ethane and Oxygen
- Composition Dependence of Band Gaps of CuGa_In_xS_2
- Spin polarization of exciton luminescence from ordered Ga0.5In0.5P
- Very High Frequency Self-Pulsation and Stable Optical Injection Locking for Well-Defined Multi-Electrode Distributed Feedback Lasers
- Josephson Point Contact Using High-Critical-Temperature Oxide-Superconductors
- DC-SQUID Using High-Critical-Temperature Oxide Superconductors
- Out-Diffusion of Chromium and 0.839 eV Luminescence Center in GaAs
- Franz-Keldysh Effect in Silicon P-N Junction
- Light Detection by Superconducting Weak Link Fabricated with High-Critical-Temperature Oxide-Superconductor Film
- Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_Ga_)_In_P and GaAs Heterointerface
- Electron-Beam Electroreflectance Spectroscopy of Semiconductors
- Theoretical Analysis of Photoacoustic Displacement for Inhomogeneous Materials
- A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe : Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors
- Photoluminescence and Photoreflectance Study of Electronic Structure in Pseudomorphic n-AlGaAs/InGaAs/GaAs
- Higher-interband electroreflectance of long-range ordered Ga0.5In0.5P
- Inelastic phonon scattering in long-range-ordered (Al0.5Ga0.5)0.5In0.5P
- Electroreflectance and Photoluminescence Studies of In_Ga_xP_As_y Lattice-Matched to GaAs
- A Study on LPE Growth of IN_Ga_xPAs_y(y≃0) on (100) GaAs Substrate
- DC-SQUID with High-Critical-Temperature Oxide-Superconductor Film
- A Design Consideration of Gain-Switching Semiconductor Lasers
- Real-Time Observations of Appearance of Crosshatched Pattern during Molecular Beam Epitaxy of Compressive InGaAs on InP
- Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (111)B Substrates
- A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
- The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
- Desorption of the Excess Gallium Atoms at the Surface of Gallium Arsenide and Application to Atomic Layer Epitaxy
- Real-Time Observation of GaAs (001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction : Surfaces, Interfaces and Films
- Proposal of Application of Pulsed Vision Chip for Retinal Prosthesis
- Optical Matrix Elements in (110)-Oriented Quantum Wells
- Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
- Light-induced Annealing of Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon
- 3d-Transition Metal Related Photoluminescence in In_Ga_xP Alloys
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
- Proposal of Application of Pulsed Vision Chip to Retinal Prosthesis
- 25pTE-1 双曲の イジングモデル 相転移 けふも調べて 熱力語る(25pTE 古典フラストレート系・古典スピン系一般,領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- 25aTF-8 双曲変形の量子スピン鎖への応用 : 励起エネルギーにおけるスケール則(25aTF 量子スピン系,領域11(統計力学,物性基礎論,応用数学,力学,流体物理))
- In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs
- Diversity of Quantum Dynamical Tunneling Induced by Sublevel Transitions with a Train of Laser Pulses
- Interface Stress at OMVPE-Grown ZnS_xSe_/GaAs:Cr Heterostructure : Surfaces, Interfaces and Films
- エネルギー・スケール変調による量子系の境界条件・トポロジーの制御(最近の研究から)
- エネルギー・スケール変調による量子系の境界条件・トポロジーの制御
- Lasing Mechanism Analysis of Self-Pulsating Distributed Feedback Laser Diodes and Successful Demonstration of All-Optical Signal Recovery at 40 Gbps
- All-Optical Clock Recovery and Wavelength Conversion by Combination of Self-Pulsation Laser and Semiconductor-Optical-Amplifier-Based Mach–Zehnder Interferometer
- Laser-Induced Enhancement of Electron-Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well