A 128×128 Pixel Complementary Metal Oxide Semiconductor Image Sensor with an Improved Pixel Architecture for Detecting Modulated Light Signals
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概要
- 論文の詳細を見る
- 2006-04-01
著者
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YAMAMOTO Koji
Graduate School of Informatics, Kyoto University
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Nunoshita M
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Nunoshita M
Mitsubishi Electric Corp. Hyogo Jpn
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Nunoshita Masahiro
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nunoshita Masahiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Nunoshita Masahiro
Graduate School Of Materials Science Nara Institute Of Science And Technology
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KAGAWA Keiichiro
Graduate School of Information Science and Technology, Osaka University
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OHTA Jun
Graduate School of Materials Science, Nara Institute of Science and Technology
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OYA Yu
Graduate School of Materials Science, Nara Institute of Science and Technology
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WATANABE Kunihiro
Microsignal Co., Ltd.
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Oya Yu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Ohta J
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Ohta Jun
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Watanabe Kunihiko
the Device Development Center, Hitachi Ltd.
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Kusawake Kazushi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Kagawa Keiichiro
Graduate School Of Information Science And Technology Osaka University
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Kagawa Keiichiro
The Graduate School Of Engineering Osaka University
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Yamamoto Koji
Graduate School Of Informatics Kyoto University
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Watanabe K
Microsignal Co. Ltd.
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Nunoshita Masahiro
Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan
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YAMAMOTO Koji
Graduate School of Engineering, Osaka University
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Ohta Jun
Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan
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