Multimodal Complementary Metal–Oxide–Semiconductor Sensor Device for Imaging of Fluorescence and Electrical Potential in Deep Brain of Mouse

概要

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We have developed a multimodal complementary metal–oxide–semiconductor (CMOS) sensor device for observing neural activities in the deep brain of a mouse. The CMOS sensor includes an image sensor, electrodes, and a light-emitting diode (LED). The image sensor was designed to be operated using only four inputs/outputs (I/Os) to reduce the number of connecting wires. The electrodes were placed on the pixel array of the sensor. Windows were opened in the electrode over the photodiodes to enable the fluorescence to be imaged using the pixels under the electrodes. An LED was mounted on the chip. The sensor chip was shaped like a shank to facilitate smooth insertion into the brain tissue. The entire device was coated with a parylene layer to make it biocompatible. The experimental results showed that the green fluorescent beads on the pixel array were successfully imaged using the LED on the chip as a light source. In a brain phantom, the change in the electrical potential was successfully sensed by the electrode, and green fluorescent beads were simultaneously imaged using the pixels under the electrode. We also demonstrated that the CMOS sensor device could successfully operate in the hippocampal area of an anesthetized mouse.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-01-25