Building a Simple Model of a Pulse-Frequency-Modulation Photosensor and Demonstration of a 128×128-pixel Pulse-Frequency-Modulation Image Sensor Fabricated in a Standard 0.35-μm Complementary Metal-Oxide Semiconductor Technology

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概要

• 論文の詳細を見る
• 2004-06-01

著者

• Nunoshita M

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Nunoshita M

  Mitsubishi Electric Corp. Hyogo Jpn

• Nunoshita Masahiro

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Nunoshita Masahiro

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Nunoshita Masahiro

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• KAGAWA Keiichiro

  Graduate School of Information Science and Technology, Osaka University

• OHTA Jun

  Graduate School of Materials Science, Nara Institute of Science and Technology

• TOKUDA Takashi

  Nara Institute of Science and Technology, Graduate School of Materials Science

• TOKUDA Takashi

  Graduate School of Materials Science, Nara Institute of Science and Technology

• YOSHIDA Norikatsu

  Matsushita Electric

• Ohta J

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Ohta Jun

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Kusawake Kazushi

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Kagawa Keiichiro

  Graduate School Of Information Science And Technology Osaka University

• Kagawa Keiichiro

  The Graduate School Of Engineering Osaka University

• Tokuda Takashi

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Nunoshita Masahiro

  Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan

• Ohta Jun

  Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan

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