Proposal and Preliminary Experiments of Indoor Optical Wireless LAN Based on a CMOS Image Sensor with a High-Speed Readout Function Enabling a Low-Power Compact Module with Large Uplink Capacity (<Joint Special Issue> Recent Progress in Optoelectronics an
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概要
- 論文の詳細を見る
We propose a new scheme of indoor optical wireless LAN bused on a special CMOS image sensor (CIS), which realizes a low-power compact communication module with large uplink capacity due to space division multiple access. In our sclieme, all nodes and a hub utilize the CIS as a photoreceiver as well as a position-sensing do vice for finding the positions of the communication modules, while a single large photodiode is used in the conventional systems. Although conventional image sensors cannot detect modulated signals because they integrate photocurrents, our CIS has a high-speed readout function for receiving optical data from the specific pixels receiving optical signals. The advantages of the proposed scheme are 1) compact, embodiment of the communication module due to no need of the bulky mechanical components for searching the other modules, 2) space division multiple access, which leads to 3) large capacity of uplink, and 4) applicability of simple modulation and coding schemes for optical signals. In our scheme, diffusive and narrow beam lights are complementally used for position detection and communication, respectively, which leads to the advantage 5) low power consumption of both light emitter and receiver circuits. To demonstrate two basic functional modes of our CIS: an IS (image sensor) mode and a COM (communication) mode, we fabricate an 8×8-pixel CIS by use of a 0.8/μm BiCMOS technology. In the experiments, the image of a light, source is successfully captured in the IS mode for integration time of 29.6 msec and optical power of 1.1 nW. After the functional mode of the pixel receiving the light is changed to the COM mode, the eye pattern of the modulated light, is obtained from the pixel at frequency of 1 MHz, We also fabricate a test, pixel circuit with in-pixel amplifier, with which operation speed is improved to 100 MHz.
- 社団法人電子情報通信学会の論文
- 2003-05-01
著者
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Nunoshita M
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Kawakami T
Department Of Electrical And Electronic Eng. Niigata University
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Nunoshita M
Mitsubishi Electric Corp. Hyogo Jpn
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Nunoshita Masahiro
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nunoshita Masahiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Nunoshita Masahiro
Graduate School Of Materials Science Nara Institute Of Science And Technology
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KAGAWA Keiichiro
Graduate School of Information Science and Technology, Osaka University
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ASAZU Hiroaki
Graduate School of Materials Science, Nara Institute of Science and Technology
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OHTA Jun
Graduate School of Materials Science, Nara Institute of Science and Technology
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WATANABE Kunihiro
Microsignal Co., Ltd.
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NISHIMURA Tomohiro
Graduate School of Materials Science. Nara Institute of Science and Technology
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HIRAI Takao
Graduate School of Materials Science. Nara Institute of Science and Technology
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YAMASAKI Yasushi
MICROSIGNAL Co., LTD.
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KAWAKAMI Tomoaki
Graduate School of Materials Science. Nara Institute of Science and Technology
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Ohta J
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Ohta Jun
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Watanabe Kunihiko
the Device Development Center, Hitachi Ltd.
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Kusawake Kazushi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Kagawa Keiichiro
Graduate School Of Information Science And Technology Osaka University
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Kagawa Keiichiro
The Graduate School Of Engineering Osaka University
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Yamasaki Yasushi
Microsignal Co. Ltd.
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Nishimura Tomohiro
Graduate School Of Materials Science Kara Institute Of Science And Technology
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Nishimura Tomohiro
Department Of Physical Electronics Tokyo Institute Of Technology
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Hirai T
Ntt Corp. Atsugi‐shi Jpn
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Asazu Hiroaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Watanabe K
Microsignal Co. Ltd.
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HIRAI Takao
Graduate School of Materials Science, Kara Institute of Science and Technology
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Nunoshita Masahiro
Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan
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Ohta Jun
Graduate School of Material Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0101, Japan
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