Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-12-01

著者

• Nunoshita M

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Nunoshita M

  Mitsubishi Electric Corp. Hyogo Jpn

• Nunoshita Masahiro

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Nunoshita Masahiro

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• ISU Toshiro

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• Ohtsuka K

  Sanken Electric Co. Ltd. Niiza Jpn

• Isu T

  Mitsubishi Electric Corp. Amagasaki‐shi Jpn

• Isu T

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Isu Toshiro

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Isu Toshiro

  Optoelectronics Technology Research Laboratory

• IMAIZUMI Masayuki

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• ENDOH Yasuyuki

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• OHTSUKA Ken-ichi

  Semiconductor Research Laboratory, Mitsubishi Electric Corporation

• Imaizumi Masayuki

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Imaizumi Masayuki

  Ministry Of Agriculture Forestry And Fishery

• Endoh Y

  Advanced Technology R&d Center Mitsubishi Electric Corporation

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