A Design Consideration of Gain-Switching Semiconductor Lasers
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概要
- 論文の詳細を見る
We propose a novel InGaAsP semiconductor laser which theoretically exhibits a high differential gain. The proposed semiconductor laser contains an asymmetric double quantum well structure as the active region. The differential gain enhancement invokes resonant tunneling of heavy holes in the asymmetric double quantum well structure, which takes place on the way of carrier injection process. The proposed laser is expected to be far more efficient in reducing pulse width and spectral broadening (chirping) than conventional multiquantum well lasers when driven by the gain switching method.
- 社団法人電子情報通信学会の論文
- 1998-02-25
著者
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Isu T
Mitsubishi Electric Corp. Amagasaki‐shi Jpn
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Isu T
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Isu Toshiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Isu Toshiro
Optoelectronics Technology Research Laboratory
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NOMURA Yoshinori
The authors are with Mitsubishi Electric Corporation
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ISU Toshiro
The authors are with Mitsubishi Electric Corporation
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Nomura Yoshinori
The Advanced Technology R&d Center Mitsubishi Electric Corp.
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OCHI Seiji
the Advanced Technology R&D Center, Mitsubishi Electric Corp.
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Ochi Seiji
The Advanced Technology R&d Center Mitsubishi Electric Corp.
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Isu Toshiro
the Advanced Technology R&D Center, Mitsubishi Electric Corp.
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