A Design Consideration of Gain-Switching Semiconductor Lasers

元データ 1998-02-25 社団法人電子情報通信学会

概要

We propose a novel InGaAsP semiconductor laser which theoretically exhibits a high differential gain. The proposed semiconductor laser contains an asymmetric double quantum well structure as the active region. The differential gain enhancement invokes resonant tunneling of heavy holes in the asymmetric double quantum well structure, which takes place on the way of carrier injection process. The proposed laser is expected to be far more efficient in reducing pulse width and spectral broadening (chirping) than conventional multiquantum well lasers when driven by the gain switching method.

著者

Isu T Mitsubishi Electric Corp. Amagasaki‐shi Jpn
Isu T Semiconductor Research Laboratory Mitsubishi Electric Corporation
Isu Toshiro Semiconductor Research Laboratory Mitsubishi Electric Corporation
Isu Toshiro Optoelectronics Technology Research Laboratory
NOMURA Yoshinori The authors are with Mitsubishi Electric Corporation
ISU Toshiro The authors are with Mitsubishi Electric Corporation
Nomura Yoshinori The Advanced Technology R&d Center Mitsubishi Electric Corp.
OCHI Seiji the Advanced Technology R&D Center, Mitsubishi Electric Corp.
Ochi Seiji The Advanced Technology R&d Center Mitsubishi Electric Corp.
Isu Toshiro the Advanced Technology R&D Center, Mitsubishi Electric Corp.

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