Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• An ultrahigh-vacuum chemical vapor deposition technique with disilane (Si2H6) molecular flux is applied to fine contact hole filling. Structural observations reveal that a completely buried Si contact has a stacked structure, in which the lower portion consists of pyramidal epitaxial Si, whose height depends not only on the growth temperature and the Si2H6 flow rate but also on the hole diameter, and polycrystalline Si is deposited on the epitaxial Si. The mechanism of selective epitaxy is interpreted in terms of incubation time and facet growth rate depending on growth temperature and Si2H6 flow rate.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1999-07-15

著者

• SATOH Shinichi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Tokuda Yasunori

  Advanced R&d Technology Center Mitsubishi Electric Corporation

• Maruno Shigemitsu

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Nakahata Takumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan

• Nakahata Takumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

• Furukawa Taisuke

  Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Yamakawa Satoshi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Furukawa Taisuke

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Nakahata Takumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation,

• Satoh Shinichi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation,

• Satoh Shinichi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Maruno Shigemitsu

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

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