X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
スポンサーリンク
概要
- 論文の詳細を見る
An insertion of a thin Al layer between the AlGaN surface and the gate metal is effective in improving not only gate leakage current but also current collapse in AlGaN/GaN high-electron-mobility transistors. In order to investigate the origin of the reduced trap density, which is considered as the reason for the improvements of transistor characteristics, the chemical properties around the gate metal was examined using X-ray photoelectron spectroscopy. As a result we found the formation of the AlOx layer at the interface between the AlGaN and the gate metal by thin Al layer insertion, which is speculated to affect the reduction of trap density and the improvement of transistor characteristics.
- Japan Society of Applied Physicsの論文
- 2007-06-25
著者
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Kawase Kazumasa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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OISHI Toshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Oishi Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Suita Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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