Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
スポンサーリンク
概要
- 論文の詳細を見る
- 2009-03-25
著者
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
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Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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SUITA Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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YAGYU Eiji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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YOSHIARA Kiichi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Yoshiara Kiichi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yoshiara Kiichi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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NANJO Takuma
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
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OISHI Toshiyuki
Information Technology R&D Center, Mitsubishi Electric Corporation
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Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Yagyu Eiji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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