Yagyu Eiji | Advanced Technology R&d Center Mitsubishi Electric Corporation

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著作論文

Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications
Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts

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