Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts

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概要

• 論文の詳細を見る

著者

• Yoshiara Kiichi

  Advanced Technology R&d Center Mitsubishi Electric Corp.

• Tokuda Yasunori

  Department Of Bioscience And Biotechnology Faculty Of Engineering Okayama University

• Nanjo Takuma

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Suita Muneyoshi

  Advanced Technology R&d Center Mitsubishi Electric Corp.

• Yagyu Eiji

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Abe Yuji

  Advanced R&d Technology Center Mitsubishi Electric Corporation

• SHIOZAWA Katsuomi

  Advanced Technology R & D Center, Mitsubishi Electric Corporation

• OISHI Toshiyuki

  Advanced Technology R & D Center, Mitsubishi Electric Corporation

• Motoya Tsukasa

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

• Imai Akihumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

• Suzuki Yosuke

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

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