Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-07-15
著者
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
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Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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FURUKAWA Akihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SHIOZAWA Katsuomi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Shiozawa K
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
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Sugihara Kazuyoshi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Furukawa A
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Furukawa Akihiko
Advanced Technology R & D Center Mitsubishi Electric Corporation
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Shiozawa Katsuomi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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SHIOZAWA Katsuomi
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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OISHI Toshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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