Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-12-15
著者
-
KIMURA Kozo
Optoelectronics Joint Research Laboratory
-
Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
-
Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
-
Kanamoto K
Mitsubishi Electric Corp. Hyogo Jpn
-
Kanamoto Kyozo
Femtosecond Technology Research Association (festa)
-
Kanamoto Kyozo
Central Research Laboratory Mitsubishi Electric Corporation
-
TSUKADA Noriaki
Central Research Laboratory, Mitsubishi Electric Corporation
-
Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
-
Tsukada N
Aomori Univ. Aomori Jpn
-
Tsukada Noriaki
Central Research Lab. Mitsubishi Electric Corp.
関連論文
- DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
- Electron Localization due to Symmetry Breaking in Nonlinear Coupled-Quantum Systems
- ac Field-Induced Localization of an Electron in a Double-Well Quantum Structure
- Optical 3R Wavelength Conversion by a combination of Self-pulsating DFB Laser and SOA-based Mach-Zehnder Interferometer
- Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
- Two Dimensional Semiconductor-Based Photonic Crystal Slab Waveguides for Ultra-Fast Optical Signal Processing Devices(Photonic Crystals and Their Device Applications)
- Electron Wave Transfer in Coupled Quantum Wires and Its Control by Externally Applied Electric Field
- Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
- First Operation of AlGaN Channel High Electron Mobility Transistors
- First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
- Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications
- Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
- Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
- On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
- Very High Frequency Self-Pulsation and Stable Optical Injection Locking for Well-Defined Multi-Electrode Distributed Feedback Lasers
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- Single Photonic-Crystal Defect Switch for All-Optical Ultrafast Operation Using Two Photon Absorption(Ultrafast Photonics)
- Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
- Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
- Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
- Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
- Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
- Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
- Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
- Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
- Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
- Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
- Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
- Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
- Photoluminescence of a Novel Hetero n-i-p-i Structure Incorporating Triple Quantum Wells
- In-Plane Photocurrent Spectroscopy of Undoped GaAs/AlAs Quantum Well Heterostructures : Surfaces, Interfaces and Films
- Reply to "Comment on 'Intracenter Transition in EL2 Observed in Photocurrent Spectrum'"
- Photo-Electron Paramagnetic Resonance Study of As_ Antisite Defect in As-Grown GaAs Crystals of Different Stoichiometry
- Intracenter Transition in EL2 Observed in Photocurrent Spectrum
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Photochemical Hole Burning of the Quinone Derivatives in Polymer Matrices
- First Operation of AlGaN Channel High Electron Mobility Transistors
- Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
- Optical Phased Array Functions in Double-Layered Metallic Plate Systems with Artificially Modulated Slit Arrays
- Saturation Effects of a Two-Level System in Two RF Fields
- Lasing Mechanism Analysis of Self-Pulsating Distributed Feedback Laser Diodes and Successful Demonstration of All-Optical Signal Recovery at 40 Gbps
- X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- All-Optical Clock Recovery and Wavelength Conversion by Combination of Self-Pulsation Laser and Semiconductor-Optical-Amplifier-Based Mach–Zehnder Interferometer
- Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
- Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition